| Sr. No. | P-type Semiconductor | N-type Semiconductor |
| 1. | A p-type semiconductor is formed by adding a III group element as a doping element. | In an n-type semiconductor, the V group element is added as a doping element. |
| 2. | An impurity added creates a vacancy of electrons (holes) called Acceptor Atom. | An impurity added provides extra electrons and is known as Donor Atom. |
| 3. | In p-type semiconductor trivalent impurities like Al, Ga, In, etc. are added. | In n-type semiconductor pentavalent impurities like P, As, Sb, Bi, etc. are added. |
| 4. | In a p-type semiconductor, holes are the majority carriers. | In an n-type semiconductor, electrons are the majority carriers. |
| 5. | Electrons are minority carriers in a p-type semiconductor. | Holes are minority carriers in the n-type semiconductors. |
| 6. | In a p-type semiconductor, the hole density is much greater than the electron density. | In an n-type semiconductor, the electron density is much greater than the hole density. |
| 7. | The acceptor energy level of p-type is close to the valence band and away from the conduction band. | The donor energy level of the n-type is close to the conduction band and away from the valence band. |
| 8. | The majority of carriers move from higher to lower potential in a p-type semiconductor. | The majority of carriers move from lower to a higher potential in the n-type semiconductors. |